Addressing the oxide-aperture dependency of the degradation of 845 nm VCSELs for Silicon Photonics
Paper i proceeding, 2025

Discrete NIR III-As VCSELs have been used for a long time in the datacom industry. Recently, the integration of such devices onto SiN substrates was successfully achieved by means of micro-transfer printing techniques, thus allowing the use of these devices as the laser sources of next generation PICs for silicon photonics applications. Despite the maturity of modern III-V epitaxy, previous reports investigating the reliability of these so-called vertical-cavity silicon-integrated lasers (VCSILs) identified the stress-induced relocation of point defects as the main cause for the electrical and optical degradation exhibited by the LDs during accelerated ageing. In this work, we further analyze these processes by evaluating through EL imaging, TEM, numerical modeling and simulations, the variation in the properties of III-V bottom-emitting VCSELs based on the very same epitaxy and structure. The results indicate that i) the adopted aging procedure does not cause the formation of extended defects in proximity of the oxide aperture, ii) that the observed spreading in the optical beam of the laser is strongly correlated with the increase in series resistance, iii) that the electrical degradation is stronger for smaller oxide apertures, due to the more pronounced crowding of injected current occurring at the top DBR, which determines the overall series resistance of the device. These results further confirm our previous findings and help identify guidelines for the design of reliable VCSELs for future SiPh applications.

silicon photonics

VCSEL

oxide aperture

degradation

Författare

M. Buffolo

Università di Padova

M. Zenari

Università di Padova

C. De Santi

Università di Padova

Francesca Rossi

Istituto dei Materiali per l'Elettronica ed il Magnetismo

Laura Lazzarini

Istituto dei Materiali per l'Elettronica ed il Magnetismo

Gunther Roelkens

Universiteit Gent

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Alexander Grabowski

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Johan Gustavsson

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

G. Meneghesso

Università di Padova

E. Zanoni

Università di Padova

M. Meneghini

Università di Padova

Proceedings of SPIE - The International Society for Optical Engineering

0277786X (ISSN) 1996756X (eISSN)

Vol. 13384 1338408
9781510685161 (ISBN)

Vertical-Cavity Surface-Emitting Lasers XXIX 2025
San Francisco, USA,

Ämneskategorier (SSIF 2025)

Atom- och molekylfysik och optik

Den kondenserade materiens fysik

Telekommunikation

DOI

10.1117/12.3041685

Mer information

Senast uppdaterat

2025-04-29