Wafer-scale transfer-free patterned graphene transparent electrodes for GaN-based LEDs: a universal technique towards different substrates
Artikel i vetenskaplig tidskrift, 2025
With the continuous development of graphene in the field of electronic devices, it is necessary to further develop wafer-scale high-quality graphene preparation technique. A patterning preparation technique for 2-inch wafer-scale transfer-free graphene is reported in this paper, which is innovatively applicable to a variety of substrates. Based on this technique, a 2-inch wafer-scale light-emitting diode (LED) chip with graphene transparent electrodes was fabricated. The results show that the prepared graphene has high quality and uniformity, and plays a good role in improving electrode contact and current spreading. In addition, the LEDs exhibit excellent electrical and optical performance and have a good yield. This wafer-scale graphene preparation technique avoids the damage to graphene caused by the transfer process and the patterning process, which is scalable and suitable for real applications.
Graphene
Graphene devices
Substrates
Light emitting diodes
WSI circuits
Författare
Peng Hao Tang
Beijing University of Technology
Jie Sun
Fuzhou University
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Zaifa Du
Weifang University
Aoqi Fang
Beijing University of Technology
Jixin Liu
Beijing University of Technology
Rongjing Wang
Beijing University of Technology
G. Z. Pan
Chinese Academy of Sciences
Meng Xun
Chinese Academy of Sciences
Weiling Guo
Beijing University of Technology
npj 2D Materials and Applications
23977132 (eISSN)
Vol. 9 1 64Ämneskategorier (SSIF 2025)
Nanoteknisk elektronik
Den kondenserade materiens fysik
Nanoteknisk materialvetenskap
DOI
10.1038/s41699-025-00583-z