Active Thermal Control optimization and evaluation with detailed simulation and different lifetime models

Paper i proceeding, 2025

Silicon carbide (SiC) power semiconductors are superior to traditional silicon devices due to their higher efficiency and performance, but face challenges related to temperature swings caused by very low thermal capacity, which limits their lifespan. To address this issue, this study proposes control methods to regulate the junction temperature of the SiC devices also referred to as Active Thermal Control (ATC). This approach reduces temperature swings, thereby extending the lifetime of SiC devices. The article examines the practical impact of thermal management implementation. Main goal is to present advantages from system perspective, that can be gained in terms of longer life expectancy by reducing thermal stresses. The benefits were evaluated with three different lifetime models using a high-resolution simulation with a small timestep, that allowed detailed observation of switching behavior and thermal transients at the transistor level. Across all tested models, even a basic temperature management algorithm, implemented without any hardware modifications, resulted in quantifiable improvements.