A Compact 40 dBm GaN/SiC MMIC Doherty Power Amplifier at FR3 Band for 6G Applications

Paper i proceeding, 2025

In this paper a Doherty power amplifier (DPA) on a 120 nm GaN on SiC monolithic microwave integrated circuit (MMIC) process is presented. The measurement results show a peak power added efficiency (PAE) of 27-43% and 6 dB backoff PAE of 19-37% with a peak delivered output power of 37-41 dBm across the operational band of 13-16 GHz. This performance is achieved in a compact active area of 2.6 × 1.7 mm², which makes it an efficient and scalable solution for the high power and bandwidth requirements of 6G networks.