An 8-Way E-Band GaAs Power Amplifier Utilizing Shared-Ground Vias

Paper i proceeding, 2026

In this paper, an 8-way 3-stage E-band gallium arsenide (GaAs) power amplifier utilizing shared-ground vias is presented. To save area, the ground vias of neighboring transistors are shared, while keeping the gate and drain connections separate. This requires careful de-embedding of the via influence in the transistor model as is outlined in this paper. In measurements, the PA has more than 10 dB small signal gain covering from 60 to 81.4 GHz and at 78 GHz produces 28 dBm of output power with a maximum PAE of 27.1%.