Design and Characterization of In0.22Ga0.78As-based Schottky-barrier diode mixers operating at 3.4 THz
Artikel i vetenskaplig tidskrift, 2026
A key challenge in developing terahertz Schottky-barrier diode-based receivers operating at ambient temperatures is to overcome the complexities of fabrication and machining, and to achieve efficient coupling between the waveguide feed horn and the THz signal. This paper presents characterization of WM-57, In0.22Ga0.78As Schottky-barrier diode mixers realized on a 2-μm-thick indium phosphide membrane. The mixers were pumped by a quantum-cascade laser operating at 3.4 THz; the radio and local-oscillator signals were spatially superimposed using a Mylar beam splitter and coupled to the mixers via an integrated pyramidal horn antenna. A double-sideband receiver noise temperature of 28 500 K was measured at 3.4 THz for 6-μm Mylar at an IF of 1.5 GHz, with 2-mW of LO power coupled to the mixer. The DSB receiver noise temperature corrected for atmospheric attenuation is 27 600 K. These results represent a key step toward room-temperature THz front-end systems for limb-sounding instruments to detect trace gases in the mesosphere and lower thermosphere of the Earth's atmosphere.
Författare
Divya Jayasankar
Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik
Deutsches Zentrums für Luft- und Raumfahrt (DLR)
Nick Rothbart
Deutsches Zentrums für Luft- und Raumfahrt (DLR)
Theodore Reck
WiTECH
Virginia Diodes, Inc.
Jan Stake
Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik
WiTECH
Jeffrey Hesler
Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik
Virginia Diodes, Inc.
WiTECH
Heinz-Wilhelm Hübers
Deutsches Zentrums für Luft- und Raumfahrt (DLR)
IEEE Transactions on Terahertz Science and Technology
2156-342X (ISSN) 21563446 (eISSN)
Vol. In PressSupraterahertzelektronik för framtida FIR instrument
Rymdstyrelsen (2023-00310), 2024-01-01 -- 2027-12-31.
Styrkeområden
Informations- och kommunikationsteknik
Nanovetenskap och nanoteknik
Ämneskategorier (SSIF 2025)
Annan elektroteknik och elektronik
DOI
10.1109/TTHZ.2026.3683530