Tailoring of nickel silicide contacts on silicon carbide
Artikel i vetenskaplig tidskrift, 2007

Co-deposition technique by means of simultaneous ion beam sputtering of nickel and silicon onto SiC was performed for tailoring of Nisilicide/SiC contacts. The prepared samples were analysed by means of XRD and XPS in order to obtain information about the surface and interface chemistry. Depth profiling was used in order to analyse in-depth information and chemical distribution of the specimens. XRD results showed that the main phase formed is Ni2Si. The XPS analysis confirmed the formation of the silicide on the surface and showed details about the chemical composition of the layer and layer/substrate interface. Moreover, the XPS depth profiles with detailed analysis of XPS peaks suggested that tailoring of C distribution could be monitored by the co-deposition technique employed. (C) 2007 Elsevier B.V. All rights reserved.

OHMIC CONTACT

NI

co-deposition

XPS

depth

profiles

silicon carbide

interfacial reactions

Författare

S. A. Perez-Garcia

Centro de Investigacion en Materiales Avanzados

Chalmers University of Technology

Lars Nyborg

Chalmers, Material- och tillverkningsteknik

Applied Surface Science

0169-4332 (ISSN)

Vol. 254 135-138

Ämneskategorier

Materialteknik

DOI

10.1016/j.apsusc.2007.07.055