Static Characterization and parameter Extraction in MOS Transistors
Artikel i vetenskaplig tidskrift, 1998

This paper describes the basic concepts for efficient parameter extraction. The focus is on efficiency in parameter extraction and often analytical manipulation of the model equations can be used to increase efficiency. In particular, extraction of the linear region miniset parameters, and how series resistance and effective geometry can be derived from these parameters, will be discussed. Furthermore, extraction of the saturation and subthreshold region parameters are discussed and the importance of the underlying model is highlighted.

Författare

Kjell Jeppson

Institutionen för mikroelektronik, Fasta tillståndets elektronik

Microelectronic Engineering

0167-9317 (ISSN)

Vol. 40 181-186

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1016/S0167-9317(98)00269-X