Intersubband energies in Al1-yInyN/Ga1-xInxN heterostructures with lattice constant close to aGaN
Artikel i vetenskaplig tidskrift, 2012
We have studied the conduction band profile and the intersubband transition energy, E-12, of Al1-yInyN/Ga1-xInxN quantum well structures. We have considered how material parameters such as non-parabolicity and the uncertainty in the bowing parameter affect E-12 and the corresponding wavelength, lambda(12). The calculations include strain and cover the transition range from telecommunication wavelengths (1.55 mu m) to the mid-infrared (similar to 10 mu m). Our results show that the transition energies of strain-free Al1-yInyN/Ga1-xInxN quantum well structures, which are lattice-matched to GaN (y = 17.7%, x = 0), resulted in wavelengths above similar to 2 mu m. To reach shorter wavelengths, we explored structures with other indium concentrations but maintaining a small mismatch to GaN. For similar to 1% lattice mismatch the wavelength lambda(12) could be reduced to less than 1.55 mu m. The results serve as a starting point for designing and epitaxial growth of photonic intersubband structures.
AlN
GaN
Intersubband
devices
mu-m
wurtzite semiconductors
molecular-beam epitaxy
laser-diodes
GaInN
Telecommunication wavelength
wavelengths
polarization
AlInN
Strain
absorption
growth
multiple-quantum wells
Författare
H. Akabli
Université Cadi Ayyad
A. Almaggoussi
Université Cadi Ayyad
A. Abounadi
Université Cadi Ayyad
A. Rajira
Université Cadi Ayyad
Kristian Berland
Chalmers, Teknisk fysik, Elektronikmaterial
Thorvald Andersson
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Superlattices and Microstructures
0749-6036 (ISSN) 1096-3677 (eISSN)
Vol. 52 1 70-77Ämneskategorier
Fysik
DOI
10.1016/j.spmi.2012.04.012