Mn-induced modifications of Ga 3d photoemission from (Ga, Mn) As: evidence for long range effects
Artikel i vetenskaplig tidskrift, 2012

Using synchrotron based photoemission, we have investigated the Mn-induced changes in Ga 3d core level spectra from as-grown Ga1-xMnxAs. Although Mn is located in Ga substitutional sites, and therefore does not have any Ga nearest neighbors, the impact of Mn on the Ga core level spectra is pronounced even at Mn concentrations in the region of 0.5%. The analysis shows that each Mn atom affects a volume corresponding to a sphere with around 1.4 nm diameter.


magnetic semiconductor


Janusz Kanski

Chalmers, Teknisk fysik, Fasta tillståndets fysik

Intikhab Ulfat

Chalmers, Teknisk fysik, Fasta tillståndets fysik

Lars Ilver

Chalmers, Teknisk fysik, Fasta tillståndets fysik

M. Leandersson

Lunds universitet

J. Sadowski

Lunds universitet

K. Karlsson

Högskolan i Skövde

P. Pal

National Physical Laboratory India

Journal of Physics Condensed Matter

0953-8984 (ISSN) 1361-648X (eISSN)

Vol. 24 43 435802





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