Point defect balance in epitaxial GaSb
Artikel i vetenskaplig tidskrift, 2014
Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.
Författare
N. Segercrantz
Aalto-Yliopisto
J. Slotte
Aalto-Yliopisto
I. Makkonen
Aalto-Yliopisto
J. Kujala
Aalto-Yliopisto
F. Tuomisto
Aalto-Yliopisto
Yuxin Song
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Chinese Academy of Sciences
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Applied Physics Letters
0003-6951 (ISSN) 1077-3118 (eISSN)
Vol. 105 8 art. no. 082113- 082113Ämneskategorier
Elektroteknik och elektronik
DOI
10.1063/1.4894473