Combined empirical and look-up table approach for non-quasi-static modelling of GaN HEMTs
Paper i proceeding, 2009
In this paper the empirical and the look-up table approaches are combined to accurately model a gallium nitride based HEMT on silicon carbide. That solution allows to exploit the advantages of both approaches. The validity of the extracted model is verified by comparing model simulations with DC and microwave measurements.
HEMT
Semiconductor device modeling
Empirical model
Look-up table model
Författare
G. Crupi
Universita degli Studi di Messina
Dominique Schreurs
KU Leuven
A. Caddemi
Universita degli Studi di Messina
Iltcho Angelov
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Rui Liu
KU Leuven
Interuniversity Micro-Electronics Center at Leuven
Marianne Germain
Interuniversity Micro-Electronics Center at Leuven
Walter De Raedt
Interuniversity Micro-Electronics Center at Leuven
9th International Conference on Telecommunications in Modern Satellite, Cable, and Broadcasting Services, TELSIKS 2009 - Proceedings of Paper
40-43 5339496
978-142444383-3 (ISBN)
Ämneskategorier
Elektroteknik och elektronik
DOI
10.1109/TELSKS.2009.5339496
ISBN
978-142444383-3