Harmonic Distortion Analysis of InP HBTs with 650 GHz f(max) for High Data Rate Communication Systems
Paper i proceeding, 2017
High frequency (h.f.) harmonic distortion (HD) of advanced InP heterojunction bipolar transistors (HBTs) with various emitter widths was investigated. Geometry scalable parameters for the compact model (CM) HICUM/L2 v. 2.34, featuring a two-region base-collector capacitance formulation, were extracted from temperature dependent DC and AC measurements of HBTs and from the special test structures. Single tone harmonic distortion and active two tone load pull measurements were carried out for different emitter area devices. The compact model was used for data analysis.
harmonic distortion
noise measurements
compact modeling
linearity
Heterojunction bipolar transistor
intermodulation distortion
Författare
P. Sakalas
Fiziniu ir Technologijos Mokslu Centras
Technische Universität Dresden
M. Schroter
Technische Universität Dresden
University of California
T. Nardmann
Technische Universität Dresden
Herbert Zirath
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest
1550-8781 (ISSN)
978-1-5090-6069-6 (ISBN)
39th IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
Miami, USA,
Miami, USA,
Ämneskategorier
Teknisk mekanik
Infrastrukturteknik
Annan elektroteknik och elektronik
DOI
10.1109/CSICS.2017.8240429