An E-band silicon-ic-to-waveguide contactless transition incorporating a low-loss spatial power combiner

Piyush Kaul; Alhassan Aljarosha; A. B. Smolders; Peter Baltus; Marion Matters-Kammerer; Rob Maaskant

doi:10.23919/APMC.2018.8617206

An E-band silicon-ic-to-waveguide contactless transition incorporating a low-loss spatial power combiner
Paper i proceeding, 2018

A novel contactless transition from a (Bi)CMOS Silicon IC (p-doped substrate) to a metal waveguide in E-Band is presented. This transition also incorporates a spatial power combiner in air to enable direct electromagnetic coupling from an array of on-chip microstrip transmission lines to a single waveguide mode, and vice versa. The transition is relatively low loss and is particularly suitable for high-power mm-wave applications. The simulated return loss of a four-channel passive back-to-back transition is better than 10 dB over the frequency band ranging from 60-90 GHz (E-Band). The average insertion loss of a single transition is 1.31 dB over the entire E-Band.

E-Band

Power combiners

Millimeter wave integrated circuits (MMIC)

Waveguide transitions

Electromagnetic coupling