Molecular beam epitaxy growth of GaSb1-xBix without rotation
Artikel i vetenskaplig tidskrift, 2019
GaSb1-xBix thin film was grown on a 2 inch GaSb substrate by molecular beam epitaxy (MBE) without substrate rotation. Bi composition is found to vary from 2.76% to 3.98% across the wafer. The distribution of Bi content is mainly determined by spatial non-uniformity of Sb/Ga flux ratio, while Bi flux has slightly influence. Ostwald ripening process is confirmed to be reason for bigger Bi droplets via Bi surface diffusion. With the increase of Sb/Ga flux ratio, Ostwald ripening process is suppressed. At high Bi flux, excess Ga atoms accumulate on surface and form droplets.
Bi incorporation
Sb/Ga flux ratio
Bi flux
Stationary growth
GaSbBi
Molecular beam epitaxy
Författare
Chaodan Chi
Chinese Academy of Sciences
L. Yue
Chinese Academy of Sciences
Yanchao Zhang
Semiconductor Materials Co., Ltd
ShanghaiTech University
Z. Zhang
ShanghaiTech University
Chinese Academy of Sciences
Xin Ou
Chinese Academy of Sciences
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Chinese Academy of Sciences
Vacuum
0042-207X (ISSN)
Vol. 168 108819Ämneskategorier
Oorganisk kemi
Polymerteknologi
Materialkemi
DOI
10.1016/j.vacuum.2019.108819