Characterization and Compensation of Thermal Effects in GaN HEMT Technologies
The first part outlines a methodology to electrically extract the thermal resistance of a GaN resistor without risking distortion from field induced electron trapping effects, which are exhibited by GaN heterostructures. The technique uses differential resistance measurements to identify a suitable resistor geometry, which minimizes trapping effects while enhancing the self-heating. Such conditions are crucial for electrical methods since these exploit the self- heating for a thermal analysis.
Furthermore, a test structure and measurement method to electrically characterize the lateral heat spread was designed and evaluated. The structure is implemented with a thermal sensor, which utilizes the temperature-dependent IV characteristics of a GaN resistor, making it suitable for integration in GaN MMICs. The transient response can be obtained to extract the thermal time constants and propagation delay of the heat spread. At higher ambient temperatures, the propagation delay increases and the thermal coupling is increased. Lastly, a biasing technique to compensate for thermal degradation of the RF performance of an LNA was developed. By utilizing the gate- and drain voltage dependence of the RF performance, a constant gain against increasing temperature can e.g. be achieved.
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik, Mikrovågselektronik
Compensation of Performance Degradation due to Thermal Effects in GaN LNA Using Dynamic Bias
EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference,; (2018)p. 245-248
Paper i proceeding
Analysis of Lateral Thermal Coupling for GaN MMIC Technologies
IEEE Transactions on Microwave Theory and Techniques,; Vol. 66(2018)p. 4430-4438
Artikel i vetenskaplig tidskrift
Johan Bremer, Ding Yuan Chen, Aleksandra Malko, Manfred Madel, Niklas Rorsman, Sten E. Gunnarsson, Kristoffer Andersson, Torbjörn M. J. Nilsson and Mattias Thorsell, "Thermal Characterization of GaN HEMTs Affected by Trapping Effects Using Electrical Measurements"
Elektroteknik och elektronik
Annan elektroteknik och elektronik
Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology: Technical report MC2-429
Chalmers tekniska högskola
Kollektorn (A423), Kemivägen 9
Opponent: Dr. Peter Melin, Ericsson AB, Sweden