Pure edge-contact devices on single-layer-CVD-graphene integrated into a single chip
Artikel i vetenskaplig tidskrift, 2023

We present a simple and cost-effective fabrication technique for on-chip integration of pure edge contact two-terminal (2T) and Graphene field effect transistor (GFET) devices with low contact resistance and nonlinear characteristics based on single-layer chemical-vapor-deposited (CVD) graphene. We use a smart print-based mask projection technique with a 10X magnification objective lens for maskless lithography followed by thermal evaporation of the contact material Cr-Pd-Au through three different angles (90° and ± 45°) using a customized inclined-angle sample-holder to control the angle during normal incidence evaporation for edge-contact to graphene. Our fabrication technique, graphene quality, and contact geometry enable pure metal contact to 2D single-layer graphene allowing electron transport through the 1D atomic edge of graphene. Our devices show some signatures of edge contact to graphene in terms of very low contact resistance of 23.5 Ω, the sheet resistance of 11.5 Ω, and sharp nonlinear voltage-current characteristics (VCC) which are highly sensitive to the bias voltage. This study may find application in future graphene-integrated chip-scale passive or active low-power electronic devices.

Författare

Saraswati Behera

Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik

2D-Tech

Scientific Reports

2045-2322 (ISSN) 20452322 (eISSN)

Vol. 13 1 10588

2D material-baserad teknologi för industriella applikationer (2D-TECH)

GKN Aerospace Sweden (2D-tech), 2021-01-01 -- 2024-12-31.

VINNOVA (2019-00068), 2020-05-01 -- 2024-12-31.

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1038/s41598-023-37487-1

PubMed

37391542

Mer information

Senast uppdaterat

2024-02-29