Stoichiometric control of electron mobility and 2D superconductivity at LaAlO3-SrTiO3 interfaces
Artikel i vetenskaplig tidskrift, 2024

SrTiO3-based conducting interfaces, which exhibit coexistence of gate-tunable 2D superconductivity and strong Rashba spin-orbit coupling (RSOC), are candidates to host topological superconductive phases. Yet, superconductivity is usually in the dirty limit, which tends to suppress nonconventional pairing and therefore challenges these expectations. Here we report on LaAlO3/SrTiO3 (LAO/STO) interfaces with large mobility and mean free paths comparable to the superconducting coherence length, approaching the clean limit for superconductivity. We further show that the carrier density, mobility, and formation of the superconducting condensate are controlled by the fine-tuning of La/Al chemical ratio in the LAO film. We find a region in the superconducting phase diagram where the critical temperature is not suppressed below the Lifshitz transition, at odds with previous experimental investigations. These findings point out the relevance of achieving a clean-limit regime to enhance the observation of unconventional pairing mechanisms in these systems.

Författare

G. Singh

Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)

Roger Guzman

Chinese Academy of Sciences

G. Saiz

The Laboratory of Physics and Material studies (LPEM)

Wu Zhou

Chinese Academy of Sciences

Jaume Gazquez

Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)

Fereshteh Masoudinia

Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)

Dag Winkler

Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik

Tord Claeson

Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik

Jordi Fraxedas

Institut Catala de Nanociencia i Nanotecnologia

N. Bergeal

The Laboratory of Physics and Material studies (LPEM)

G. Herranz

Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)

Alexei Kalaboukhov

Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik

Communications Physics

23993650 (eISSN)

Vol. 7 1 149

Ämneskategorier

Annan fysik

Annan elektroteknik och elektronik

Den kondenserade materiens fysik

DOI

10.1038/s42005-024-01644-3

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Senast uppdaterat

2024-06-28