Impact of the oxide aperture width on the degradation of 845 nm VCSELs for silicon photonics
Artikel i vetenskaplig tidskrift, 2024
For the first time, we analyzed the degradation as a function of the oxide aperture in 845 nm VCSELs designed for silicon photonics (SiPh) applications. First, we evaluated the optical degradation of the devices by collecting EL images during a constant current stress. The experimental results showed an increased spreading of the optical beam of the VCSEL with increasing ageing time. Based on numerical simulations, we demonstrated that the electrical degradation (increase in series resistance) is responsible a larger current spreading which, in turn, increases the FWHM (full width half maximum) of the optical beam. We further evaluated the series resistance variation by aging four lasers with different oxide apertures. The results of this set of experiments showed that the electrical degradation is stronger as the oxide aperture is smaller, and mostly depends on the contribution of the top DBR resistance. Thanks to our analysis we proved that the use of a larger aperture can result in a better device reliability.
Optical imaging
Degradation
Degradation
Oxide aperture
Apertures
Stress
Optical beams
Diffusion
Vertical cavity surface emitting lasers
Resistance
PICs
VCSEL
Författare
M. Zenari
Università di Padova
M. Buffolo
Università di Padova
Fabiana Rampazzo
Università di Padova
C. De Santi
Università di Padova
Francesca Rossi
Istituto dei Materiali per l'Elettronica ed il Magnetismo
Laura Lazzarini
Istituto dei Materiali per l'Elettronica ed il Magnetismo
J. Goyvaerts
LIGENTEC SA
Alexander Grabowski
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Johan Gustavsson
LIGENTEC SA
Roel G. Baets
Universiteit Gent
A. Larsson
Gunther Roelkens
Universiteit Gent
G. Meneghesso
Università di Padova
E. Zanoni
Università di Padova
M. Meneghini
Università di Padova
IEEE Journal of Selected Topics in Quantum Electronics
1077-260X (ISSN) 15584542 (eISSN)
Vol. In PressÄmneskategorier
Telekommunikation
DOI
10.1109/JSTQE.2024.3415674