Chalmers University of Technology
Whole organizationShowing 7 publications
Polarized emission from single GaN quantum dots grown by molecular beam epitaxy
Size dependent biexciton binding energies in GaN quantum dots
Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology
Temperature stability of intersubband transitions in AlN/GaN quantum wells
Initial boron growth on GaN and AlN surfaces by molecular beam epitaxy
Evaluation of Using Active Circuitry for Substrate Noise Suppression
Substrate Noise Reduction Using Active Circuitry
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