Modeling of GaAs Schottky diodes for terahertz application
Paper in proceedings, 2009

3-D models have been developed to study the series resistance (Rs) at DC and the extrinsic parasitic elements (capacitance and inductance) at high frequencies for a Schottky diode chip. For the Rs study, a comparison with the experimental result has been carried out. High frequency properties and the corresponding S-parameters of the Schottky diode chip are simulated using a 3-D finite element electromagnetic solver. The parasitic elements are then extracted and studied as a function of the diode geometry. The outcome of the studies shows the existence of a significant pad-to-pad capacitance through the semi-insulating substrate which could be improved by implementing tapered shape pads.

Author

Aik-Yean Tang

Chalmers, Applied Physics, Physical Electronics

Vladimir Drakinskiy

Chalmers, Applied Physics, Physical Electronics

Peter Sobis

Chalmers, Applied Physics, Physical Electronics

Josip Vukusic

Chalmers, Applied Physics, Physical Electronics

Jan Stake

Chalmers, Applied Physics, Physical Electronics

34th International Conference on Infrared, Millimeter, and Terahertz Waves, Busan, Korea, 2009

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

ISBN

978-1-4244-5416-7

More information

Created

10/8/2017