Modeling of GaAs Schottky diodes for terahertz application
Paper i proceeding, 2009

3-D models have been developed to study the series resistance (Rs) at DC and the extrinsic parasitic elements (capacitance and inductance) at high frequencies for a Schottky diode chip. For the Rs study, a comparison with the experimental result has been carried out. High frequency properties and the corresponding S-parameters of the Schottky diode chip are simulated using a 3-D finite element electromagnetic solver. The parasitic elements are then extracted and studied as a function of the diode geometry. The outcome of the studies shows the existence of a significant pad-to-pad capacitance through the semi-insulating substrate which could be improved by implementing tapered shape pads.

Författare

Aik-Yean Tang

Chalmers, Teknisk fysik, Fysikalisk elektronik

Vladimir Drakinskiy

Chalmers, Teknisk fysik, Fysikalisk elektronik

Peter Sobis

Chalmers, Teknisk fysik, Fysikalisk elektronik

Josip Vukusic

Chalmers, Teknisk fysik, Fysikalisk elektronik

Jan Stake

Chalmers, Teknisk fysik, Fysikalisk elektronik

34th International Conference on Infrared, Millimeter, and Terahertz Waves, Busan, Korea, 2009

Ämneskategorier

Elektroteknik och elektronik

ISBN

978-1-4244-5416-7