Dielectric Properties of SiC nanowires With Different Chemical Compositions
Journal article, 2011

The investigated SiC nanowires were prepared by the “Shape Memory Process” technique. Depending on the processing parameters, nanowires with different chemical compositions, i.e. with varying amount of Si, C and O were obtained. The permittivity of the SiC nanowires was measured in the frequency range between 1 and 18 GHz which revealed that the permittivity, both real and imaginary parts, depends mostly on the C-content of the nanowires. A higher C concentration in the nanowires gives rise to a higher permittivity.

silicon carbide nanowires

Silicon carbide

Carbon content

Silicon

Nanowires

dielectric measurements

Permittivity

Carbon

permittivity

Dielectrics

Author

Anna Jänis

Swedish Defence Research Agency (FOI)

Yiming Yao

Chalmers, Materials and Manufacturing Technology, Materials Technology

Uta Klement

Chalmers, Materials and Manufacturing Technology, Surface and Microstructure Engineering

IEEE Transactions on Nanotechnology

1536-125X (ISSN)

Vol. 10 4 751-756 5575442

Subject Categories

Materials Engineering

Areas of Advance

Materials Science

DOI

10.1109/TNANO.2010.2076373

More information

Latest update

2/27/2018