Dielectric Properties of SiC nanowires With Different Chemical Compositions
Artikel i vetenskaplig tidskrift, 2011
The investigated SiC nanowires were prepared by the “Shape Memory Process” technique. Depending on the processing parameters, nanowires with different chemical compositions, i.e. with varying amount of Si, C and O were obtained. The permittivity of the SiC nanowires was measured in the frequency range between 1 and 18 GHz which revealed that the permittivity, both real and imaginary parts, depends mostly on the C-content of the nanowires. A higher C concentration in the nanowires gives rise to a higher permittivity.
silicon carbide nanowires
Silicon carbide
Carbon content
Silicon
Nanowires
dielectric measurements
Permittivity
Carbon
permittivity
Dielectrics
Författare
Anna Jänis
Totalförsvarets forskningsinstitut (FOI)
Yiming Yao
Chalmers, Material- och tillverkningsteknik, Materialteknologi
Uta Klement
Chalmers, Material- och tillverkningsteknik, Yt- och mikrostrukturteknik
IEEE Transactions on Nanotechnology
1536-125X (ISSN) 19410085 (eISSN)
Vol. 10 4 751-756 5575442Ämneskategorier
Materialteknik
Styrkeområden
Materialvetenskap
DOI
10.1109/TNANO.2010.2076373