Dielectric Properties of SiC nanowires With Different Chemical Compositions
Artikel i vetenskaplig tidskrift, 2011

The investigated SiC nanowires were prepared by the “Shape Memory Process” technique. Depending on the processing parameters, nanowires with different chemical compositions, i.e. with varying amount of Si, C and O were obtained. The permittivity of the SiC nanowires was measured in the frequency range between 1 and 18 GHz which revealed that the permittivity, both real and imaginary parts, depends mostly on the C-content of the nanowires. A higher C concentration in the nanowires gives rise to a higher permittivity.

silicon carbide nanowires

Silicon carbide

Carbon content

Silicon

Nanowires

dielectric measurements

Permittivity

Carbon

permittivity

Dielectrics

Författare

Anna Jänis

Totalförsvarets forskningsinstitut (FOI)

Yiming Yao

Chalmers, Material- och tillverkningsteknik, Materialteknologi

Uta Klement

Chalmers, Material- och tillverkningsteknik, Yt- och mikrostrukturteknik

IEEE Transactions on Nanotechnology

1536-125X (ISSN)

Vol. 10 4 751-756 5575442

Ämneskategorier

Materialteknik

Styrkeområden

Materialvetenskap

DOI

10.1109/TNANO.2010.2076373