Graphene-Si Schottky IR Detector
Journal article, 2013

This paper reports on photodetection properties of graphene-Si schottky junction by measuring current-voltage characteristics under 1.55┬Ám excitation laser. The measurements have been done on a junction fabricated by depositing mechanically exfoliated natural graphite on top of the pre-patterned silicon substrate. The electrical Schottky barrier height is estimated to be (0.44-0.47) eV with a minimum responsivity of 2.8mA/W corresponding to an internal quantum efficiency of 10% which is almost an order of magnitude larger than regular Schottky junctions. A possible explanation for the large quantum efficiency related to the 2-D nature of graphene is discussed. Large quantum efficiency, room temperature IR detection, ease of fabrication along with compatibility with Si devices can open a doorway for novel graphene-based photodetectors.

Si

Schottky diode

Detector

Graphene

Author

Mina Amirmazlaghani

K. N. Toosi University of Technology

Farshid Raissi

K. N. Toosi University of Technology

Omid Habibpour

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Josip Vukusic

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

IEEE Journal of Quantum Electronics

0018-9197 (ISSN)

Vol. 49 7 589-594

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Infrastructure

Nanofabrication Laboratory

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/JQE.2013.2261472

More information

Created

10/8/2017