Microwave noise characterization of graphene field effect transistors
Journal article, 2014

The microwave noise parameters of graphene field effect transistors (GFETs) fabricated using chemical vapor deposition graphene with 1  μm gate length in the 2 to 8 GHz range are reported. The obtained minimum noise temperature (Tmin) is 210 to 610 K for the extrinsic device and 100 to 500 K for the intrinsic GFET after de-embedding the parasitic noise contribution. The GFET noise properties are discussed in relation to FET noise models and the channel carrier transport. Comparison shows that GFETs can reach similar noise levels as contemporary Si CMOS technology provided a successful gate length scaling is performed.

microwave noise

noise modeling

Graphene FET

noise temperature

Author

Mehbuba Tanzid

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

MICHAEL ANDERSSON

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jie Sun

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 104 1 013502-

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Infrastructure

Kollberg Laboratory

Nanofabrication Laboratory

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1063/1.4861115

More information

Created

10/7/2017