An LC VCO for High Power Millimeter-Wave Signal Generation
Paper in proceedings, 2013

The paper presents a G band second harmonic VCO in 0.25um InP DHBT technology. The VCO uses a cross-coupled topology with a capacitive emitter degeneration and a second order tank to peak second harmonic signal. The VCO presents a tuning range from 169-176GHz and delivers a peak power of -2.7dBm, biased at Vc=4V and Ic=46mA. To the best of authors' knowledge, this is the first HBT cross-coupled VCO designed above 100 GHz.

Author

Szhau Lai

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Dan Kuylenstierna

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Rumen Kozhuharov

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Bertil Hansson

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

35th IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2013, Monterey, United States, 13-16 October 2013

1550-8781 (ISSN)

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Nano Technology

DOI

10.1109/CSICS.2013.6659216

ISBN

978-1-4799-0583-6

More information

Created

10/7/2017