An LC VCO for High Power Millimeter-Wave Signal Generation
Paper in proceeding, 2013
The paper presents a G band second harmonic VCO in 0.25um InP DHBT technology. The VCO uses a cross-coupled topology with a capacitive emitter degeneration and a second order tank to peak second harmonic signal. The VCO presents a tuning range from 169-176GHz and delivers a peak power of -2.7dBm, biased at Vc=4V and Ic=46mA. To the best of authors' knowledge, this is the first HBT cross-coupled VCO designed above 100 GHz.
Author
Szhau Lai
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
Dan Kuylenstierna
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Rumen Kozhuharov
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
Bertil Hansson
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Herbert Zirath
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
35th IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2013, Monterey, United States, 13-16 October 2013
1550-8781 (ISSN)
978-1-4799-0583-6 (ISBN)
Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Subject Categories
Nano Technology
DOI
10.1109/CSICS.2013.6659216
ISBN
978-1-4799-0583-6