Transformer-Based Broadband High-Linearity HBT Gm-Boosted Transconductance Mixers
Journal article, 2014

A Gm-boosted transconductance configuration mixer is proposed. Based on this topology, two broadband monolithic InGaP HBT mixers, one single device and one balanced, have been developed for C-Ku-band applications. The single device mixer has a conversion gain of 4.5 +/- 1.5 dB within the RF frequency range from 5 to 17 GHz. The balanced design has about 3.5 +/- 1.5-dB conversion gain within a frequency range of 6-18 GHz. The two mixers have very good linearity with a third-order intermodulation intercept point (IIP3) higher than 16 and 20 dBm for the single device mixer and single balanced mixer, respectively. Both mixers are pumped by a local oscillator power of 5 dBm. To the authors' best knowledge, the designed mixers demonstrate the highest IIP3 with positive conversion gain in this frequency range. Compact designs are achieved with chip sizes less than 0.5 mm(2). DC power consumptions are 30 and 50 mW, for the single device and single balanced mixer, respectively.

DESIGN

OCESSING

BALUN

InGaP HBT

CMOS

V44

transconductance mixer

P428

INTERMODULATION

Gm-boosted

transformer balun

MICROMIXER

Author

Jian Zhang

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

M. Q. Bao

Ericsson Microwave Systems AB

Dan Kuylenstierna

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Szhau Lai

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 62 1 92-99

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/tmtt.2013.2291712

More information

Created

10/7/2017