Transformer-Based Broadband High-Linearity HBT Gm-Boosted Transconductance Mixers
Artikel i vetenskaplig tidskrift, 2014

A Gm-boosted transconductance configuration mixer is proposed. Based on this topology, two broadband monolithic InGaP HBT mixers, one single device and one balanced, have been developed for C-Ku-band applications. The single device mixer has a conversion gain of 4.5 +/- 1.5 dB within the RF frequency range from 5 to 17 GHz. The balanced design has about 3.5 +/- 1.5-dB conversion gain within a frequency range of 6-18 GHz. The two mixers have very good linearity with a third-order intermodulation intercept point (IIP3) higher than 16 and 20 dBm for the single device mixer and single balanced mixer, respectively. Both mixers are pumped by a local oscillator power of 5 dBm. To the authors' best knowledge, the designed mixers demonstrate the highest IIP3 with positive conversion gain in this frequency range. Compact designs are achieved with chip sizes less than 0.5 mm(2). DC power consumptions are 30 and 50 mW, for the single device and single balanced mixer, respectively.

DESIGN

OCESSING

BALUN

InGaP HBT

CMOS

V44

transconductance mixer

P428

INTERMODULATION

Gm-boosted

transformer balun

MICROMIXER

Författare

Jian Zhang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

M. Q. Bao

Ericsson Microwave Systems AB

Dan Kuylenstierna

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Szhau Lai

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 62 1 92-99

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/tmtt.2013.2291712

Mer information

Skapat

2017-10-07