20 μm gate width CVD graphene FETs for 0.6 THz detection
Paper in proceedings, 2014

We have fabricated 20 μm gate width graphene field effect transistors (GFETs) based on graphene grown by chemical vapor deposition (CVD). These GFETs are integrated with split bow-tie antennae for room temperature, direct detection of a 0.6 THz signal. Our detectors reach a maximum optical responsivity of 3.0 V/W and a minimum noise-equivalent power (NEP) of 700 pW/Hz^0.5. The successful demonstration of THz detection using CVD graphene introduces the possibility for scalable detector production.

antenna-integrated detectors

CVD graphene

Graphene field effect transistors

direct terahertz detection

Author

Audrey Zak

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

MICHAEL ANDERSSON

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Maris Bauer

Goethe University Frankfurt

Alvydas Lisauskas

Goethe University Frankfurt

Hartmut Roskos

Goethe University Frankfurt

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

39th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2014,

2162-2027 (ISSN)

Art. no. 6956250-

39th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz
Tucson, AZ, USA, ,

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Infrastructure

Kollberg Laboratory

Nanofabrication Laboratory

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Nano Technology

DOI

10.1109/IRMMW-THz.2014.6956250

More information

Latest update

7/12/2018