20 μm gate width CVD graphene FETs for 0.6 THz detection
Paper in proceeding, 2014
We have fabricated 20 μm gate width graphene field effect transistors (GFETs) based on graphene grown by chemical vapor deposition (CVD). These GFETs are integrated with split bow-tie antennae for room temperature, direct detection of a 0.6 THz signal. Our detectors reach a maximum optical responsivity of 3.0 V/W and a minimum noise-equivalent power (NEP) of 700 pW/Hz^0.5. The successful demonstration of THz detection using CVD graphene introduces the possibility for scalable detector production.
antenna-integrated detectors
CVD graphene
Graphene field effect transistors
direct terahertz detection
Author
Audrey Zak
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
MICHAEL ANDERSSON
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Maris Bauer
Goethe University Frankfurt
Alvydas Lisauskas
Goethe University Frankfurt
Hartmut Roskos
Goethe University Frankfurt
Jan Stake
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
21622027 (ISSN) 21622035 (eISSN)
Art. no. 6956250-978-1-4799-3877-3 (ISBN)
39th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz
Tucson, AZ, USA, ,
Tucson, AZ, USA, ,
Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Infrastructure
Kollberg Laboratory
Nanofabrication Laboratory
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
Nano Technology
DOI
10.1109/IRMMW-THz.2014.6956250