Comparing depth profiling of oxide scale on SOFC interconnect-materials using ToF-SIMS with Ga-69(+), Bi-3(+)/Cs+ and C-60(+)/C-60(2+) as primary and sputter ions
Journal article, 2015
Oxide scale
Depth profiling
Secondary ion mass spectrometry
Solid oxide fuel cell
Author
Josefin Hall
Chalmers, Chemistry and Chemical Engineering, Energy and Material
U. Bexell
Dalarna university
John Fletcher
University of Gothenburg
Sead Canovic
Chalmers, Chemistry and Chemical Engineering, Energy and Material
Per Malmberg
Chalmers, Chemistry and Chemical Engineering, Energy and Material
University of Gothenburg
Materials at High Temperatures
0960-3409 (ISSN)
Vol. 32 1-2 133-141Subject Categories
Materials Engineering
Chemical Engineering
DOI
10.1179/0960340914z.00000000089