The atomic details of the interfacial interaction between the bottom electrode of Al/AlOx/Al Josephson junctions and HF-treated Si substrates
Journal article, 2015

The interface between the Al bottom contact layer and Si substrates in Al based Josephson junctions is believed to have a significant effect on the noise observed in Al based superconducting devices. We have studied the atomic structure of it by transmission electron microscopy. An amorphous layer with a thickness of ~5 nm was found between the bottom Al electrode and HF-treated Si substrate. It results from intermixing between Al, Si, and O. We also studied the chemical bonding states among the different species using energy loss near edge structure. The observations are of importance for the understanding of the origin of decoherence mechanisms in qubits based on these junctions.

TEM

Aluminum

Josephson Junctions

Qubits

Author

Lunjie Zeng

Chalmers, Applied Physics, Eva Olsson Group

Philip Krantz

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Samira Mousavi Nik

Chalmers, Applied Physics, Eva Olsson Group

Per Delsing

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Eva Olsson

Chalmers, Applied Physics, Eva Olsson Group

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 117 16 163915

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Nano Technology

DOI

10.1063/1.4919224

More information

Created

10/7/2017