Fabrication and Characterization of InGaAlAs/InP based Uni-Traveling-Carrier Photodiodes
Paper in proceedings, 2006

We have fabricated and characterized InGaAlAs/InP uni-traveling-carrier photodiodes intended for photo-mixing and data-com applications. Bandwidths up to 60GHz were recorded with 8.5┬Ám diameter devices for which a matched, integrated antenna-detector circuit has been designed.

UTC-PD

Terahertz source

Author

Josip Vukusic

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Henrik Sunnerud

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Andreas Wiberg

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Mahdad Sadeghi

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Peter Andrekson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Microwave and Terahertz Technology

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

The Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics

138-

Areas of Advance

Information and Communication Technology

Subject Categories

Telecommunications

Other Electrical Engineering, Electronic Engineering, Information Engineering

Infrastructure

Nanofabrication Laboratory

ISBN

1-4244-0400-2

More information

Created

10/8/2017