Silicon-integrated short-wavelength hybrid-cavity VCSEL
Journal article, 2015

We demonstrate a short-wavelength hybrid-cavity vertical-cavity surface-emitting laser (VCSEL) heterogeneously integrated on silicon. A GaAs-based “half-VCSEL” has been attached to a dielectric distributed Bragg reflector (DBR) on a silicon wafer using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, thereby creating a cavity with the standing-wave optical field extending over the silicon- and GaAs-based parts of the cavity. A 9 µm oxide aperture diameter VCSEL with a threshold current of 1.2 mA produces 1.6 mW optical output power at 6.0 mA bias current with a wavelength of ~845 nm.

vertical cavity surface emitting lasers

Photonic integrated circuits

semiconductor lasers

Author

Emanuel Haglund

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Sulakshna Kumari

Ghent university

Petter Westbergh

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Johan Gustavsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Gunther Roelkens

Ghent university

Roel G. Baets

Ghent university

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Optics Express

1094-4087 (ISSN)

Vol. 23 26 33634-33640

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology

Subject Categories

Telecommunications

Infrastructure

Nanofabrication Laboratory

DOI

10.1364/OE.23.033634

More information

Latest update

3/6/2018 1