Silicon-integrated short-wavelength hybrid-cavity VCSEL
Artikel i vetenskaplig tidskrift, 2015

We demonstrate a short-wavelength hybrid-cavity vertical-cavity surface-emitting laser (VCSEL) heterogeneously integrated on silicon. A GaAs-based “half-VCSEL” has been attached to a dielectric distributed Bragg reflector (DBR) on a silicon wafer using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, thereby creating a cavity with the standing-wave optical field extending over the silicon- and GaAs-based parts of the cavity. A 9 µm oxide aperture diameter VCSEL with a threshold current of 1.2 mA produces 1.6 mW optical output power at 6.0 mA bias current with a wavelength of ~845 nm.

vertical cavity surface emitting lasers

Photonic integrated circuits

semiconductor lasers

Författare

Emanuel Haglund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Sulakshna Kumari

Universiteit Gent

Petter Westbergh

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Johan Gustavsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Gunther Roelkens

Universiteit Gent

Roel G. Baets

Universiteit Gent

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Optics Express

1094-4087 (ISSN)

Vol. 23 26 33634-33640

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

Ämneskategorier

Telekommunikation

Infrastruktur

Nanotekniklaboratoriet

DOI

10.1364/OE.23.033634