Demonstration of post-growth wavelength control of VCSELs using high-contrast gratings
Preprint, 2015

We demonstrate post-growth wavelength setting of vertical-cavity surface-emitting lasers (VCSELs) using high-contrast gratings (HCGs). By fabricating HCGs with different duty-cycle and period, the HCG reflection phase can be varied, in effect giving different optical cavity lengths for HCGVCSELs with different grating parameters. This enables fabrication of monolithic multi-wavelength HCG-VCSEL arrays for wavelength-division multiplexing (WDM). The GaAs HCG is suspended in air by selective removal of an InGaP sacrificial layer. Electrically injected 980-nm HCGVCSELs with sub-mA threshold currents indicate high reflectivity from the GaAs HCGs. Lasing over a wavelength span of 15 nm was achieved, enabling a 4-channel WDM array with 5 nm channel spacing. Device design, fabrication and experimental proof-of-concept are presented.

Transceivers

Wavelength control

Semiconducting gallium

High-contrast gratings

Threshold currents

Surface emitting lasers

High reflectivity

Wavelength division multiplexing

Optical interconnects

Diffraction gratings

High contrast grating

Gallium arsenide

Sacrificial layer

CWDM

VCSELs

Optical waveguides

Electrically injected

Author

Erik Haglund

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Johan Gustavsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Jörgen Bengtsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Åsa Haglund

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

David Fattal

W. V. Sorin

Hewlett-Packard Company

Michael Tan

Hewlett-Packard Company

HP Laboratories Technical Report

1368-6798 (ISSN)

70

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

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7/2/2018 2