Step-flow growth of GaN(0001) on 4H-SiC(0001) by plasma-assisted molecular beam epitaxy
Journal article, 2016
GaN
molecular beam epitaxy
morphology
4H-SiC substrates
Ga-rich growth
step-flow growth
Author
Tobias Tingberg
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Anders Larsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Tommy Ive
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Physica Status Solidi (A) Applications and Materials Science
1862-6300 (ISSN) 1862-6319 (eISSN)
Vol. 213 9 2498-2502Driving Forces
Sustainable development
Infrastructure
Nanofabrication Laboratory
Areas of Advance
Materials Science
Subject Categories
Condensed Matter Physics
DOI
10.1002/pssa.201533001