Design of an 845-nm GaAs Vertical-Cavity Silicon-Integrated Laser with an Intracavity Grating for Coupling to a SiN Waveguide Circuit
Journal article, 2017

A short-wavelength hybrid GaAs vertical-cavity silicon-integrated laser (VCSIL) with in-plane waveguide coupling has been designed and optimized using numerical simulations. A shallow etched silicon nitride (SiN) grating is placed inside the cavity of the hybrid vertical-cavity silicon-integrated laser to both set the polarization state of the resonant optical field and to enable output coupling to a SiN waveguide with high efficiency. The numerical simulations predict that for apertures of 4 and 6-μm oxide-confined VCSILs operating at 845-nm wavelength, a slope efficiency for the light coupled to the waveguide of 0.18 and 0.22 mW/mA is achievable, respectively, while maintaining a low threshold gain of 583 and 589 cm−1, respectively, for the lasing.

silicon nanophotonics

Waveguide

gratings

semiconductor lasers

Author

Sulakshna Kumari

Ghent university

Johan Gustavsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Emanuel Haglund

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Jörgen Bengtsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Gunther Roelkens

Ghent university

Roel G. Baets

Ghent university

IEEE Photonics Journal

1943-0655 (ISSN) 1943-0647 (eISSN)

Vol. 9 4 1504109- 7954576

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Telecommunications

DOI

10.1109/JPHOT.2017.2717380

More information

Latest update

3/6/2018 1