Design of an 845-nm GaAs Vertical-Cavity Silicon-Integrated Laser with an Intracavity Grating for Coupling to a SiN Waveguide Circuit
Artikel i vetenskaplig tidskrift, 2017

A short-wavelength hybrid GaAs vertical-cavity silicon-integrated laser (VCSIL) with in-plane waveguide coupling has been designed and optimized using numerical simulations. A shallow etched silicon nitride (SiN) grating is placed inside the cavity of the hybrid vertical-cavity silicon-integrated laser to both set the polarization state of the resonant optical field and to enable output coupling to a SiN waveguide with high efficiency. The numerical simulations predict that for apertures of 4 and 6-μm oxide-confined VCSILs operating at 845-nm wavelength, a slope efficiency for the light coupled to the waveguide of 0.18 and 0.22 mW/mA is achievable, respectively, while maintaining a low threshold gain of 583 and 589 cm−1, respectively, for the lasing.

silicon nanophotonics



semiconductor lasers


Sulakshna Kumari

Universiteit Gent

Johan Gustavsson

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Emanuel Haglund

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Jörgen Bengtsson

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Gunther Roelkens

Universiteit Gent

Roel G. Baets

Universiteit Gent

IEEE Photonics Journal

19430655 (ISSN)

Vol. 9 4 1504109- 7954576


Nanovetenskap och nanoteknik





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