A flexible graphene terahertz detector
Journal article, 2017

We present a flexible terahertz (THz) detector based on a graphene field-effect transistor fabricated on a plastic substrate. At room temperature, this detector reveals voltage responsivity above 2 V/W and estimated noise equivalent power (NEP) below 3 nW/Hz1/2 at 487 GHz. We have investigated the effects of bending strain on DC characteristics, voltage responsivity, and NEP of the detector, and the results reveal its robust performance. Our findings have shown that graphene is a promising material for the development of THz flexible technology.

plastic substrates

2D materials

field-effect transistors

flexible electronics

sensors

THz detectors

Graphene

Author

Xinxin Yang

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Andrei Vorobiev

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Andrey Generalov

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

MICHAEL ANDERSSON

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 111 2 021102

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Infrastructure

Kollberg Laboratory

Nanofabrication Laboratory

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

DOI

10.1063/1.4993434

More information

Created

10/8/2017