Test structures for evaluating Al2O3 dielectrics for graphene field effect transistors on flexible substrates
Paper in proceeding, 2018
We have developed a test structure for evaluating the quality of Al2O3 gate dielectrics grown on graphene for graphene field effect transistors on flexible substrates. The test structure consists of a metal/dielectric/ graphene stack on a PET substrate and requires only one lithography step for the patterning of the topside metal electrodes. Results from measurements of leakage current, capacitance and loss tangent are presented.
test structures
hysteresis
leakage current
graphene
loss tangents
capacitance
field effect transistors
Author
Xinxin Yang
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Marlene Bonmann
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Andrei Vorobiev
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Kjell Jeppson
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Jan Stake
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
IEEE International Conference on Microelectronic Test Structures
Vol. 2018-March 75-78
978-1-5386-5069-1 (ISBN)
International Conference on Microelectronic Test Structures
Austin, Texas, USA,
Austin, Texas, USA,
Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Infrastructure
Kollberg Laboratory
Nanofabrication Laboratory
Subject Categories
Other Materials Engineering
Electrical Engineering, Electronic Engineering, Information Engineering
Nano Technology
DOI
10.1109/ICMTS.2018.8383768