Test structures for evaluating Al2O3 dielectrics for graphene field effect transistors on flexible substrates
Paper in proceedings, 2018

We have developed a test structure for evalua­ting the quality of Al2O3 gate dielectrics grown on graphene for graphene field effect transistors on flexible substrates. The test structure consists of a metal/dielectric/ graphene stack on a PET substrate and requires only one lithography step for the patterning of the topside metal electrodes. Results from measurements of leakage current, capacitance and loss tangent are presented.

test structures

hysteresis

leakage current

graphene

loss tangents

capacitance

field effect transistors

Author

Xinxin Yang

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Marlene Bonmann

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Andrei Vorobiev

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Kjell Jeppson

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Proceedings of the 2018 IEEE International Conference on Microelectronic Test Structures

1071-9032 (ISSN) 2158-1029 (eISSN)

Vol. 31 75-78

International Conference on Microelectronic Test Structures
Austin, Texas, USA,

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Infrastructure

Kollberg Laboratory

Nanofabrication Laboratory

Subject Categories

Other Materials Engineering

Electrical Engineering, Electronic Engineering, Information Engineering

Nano Technology

DOI

10.1109/ICMTS.2018.8383768

More information

Latest update

7/6/2018 6