Improved bandwidth of a 2THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer
Journal article, 2019
We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer.
gain and noise bandwidth
GaN buffer layer
HEB
Author
S. Antipov
Moscow State Pedagogical University
A. Trifonov
Moscow State Pedagogical University
Sascha Krause
Chalmers, Space, Earth and Environment, Onsala Space Observatory
Denis Meledin
Chalmers, Space, Earth and Environment, Onsala Space Observatory
N. Kaurova
Moscow State Pedagogical University
M. Rudzinski
Lukasiewicz Research Network - Institute of Microelectronics and Photonics (LUKASIEWICZ-IMIF)
Vincent Desmaris
Chalmers, Space, Earth and Environment, Onsala Space Observatory
Victor Belitsky
Chalmers, Space, Earth and Environment, Onsala Space Observatory
G. Goltsman
Moscow State Pedagogical University
National Research University Higher School of Economics
Superconductor Science and Technology
0953-2048 (ISSN) 1361-6668 (eISSN)
Vol. 32 7 075003Subject Categories
Other Physics Topics
Signal Processing
Condensed Matter Physics
DOI
10.1088/1361-6668/ab137b