Improved bandwidth of a 2THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer
Journal article, 2019

We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer.

HEB

GaN buffer layer

gain and noise bandwidth

Author

S. Antipov

Moscow State Pedagogical University

A. Trifonov

Moscow State Pedagogical University

Sascha Krause

Chalmers, Space, Earth and Environment, Onsala Space Observatory, GARD Technology

Denis Meledin

Chalmers, Space, Earth and Environment, Onsala Space Observatory, GARD Technology

N. Kaurova

Moscow State Pedagogical University

M. Rudzinski

Institute of Electronic Materials Technology (ITME)

Vincent Desmaris

Chalmers, Space, Earth and Environment, Onsala Space Observatory, GARD Technology

Victor Belitsky

Chalmers, Space, Earth and Environment, Onsala Space Observatory, GARD Technology

G. Goltsman

Moscow State Pedagogical University

National Research University Higher School of Economics

Superconductor Science and Technology

0953-2048 (ISSN) 1361-6668 (eISSN)

Vol. 32 7 075003

Subject Categories

Other Physics Topics

Signal Processing

Condensed Matter Physics

DOI

10.1088/1361-6668/ab137b

More information

Latest update

11/13/2019