Improved bandwidth of a 2THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer
Artikel i vetenskaplig tidskrift, 2019
We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer.
gain and noise bandwidth
GaN buffer layer
HEB
Författare
S. Antipov
Moscow State Pedagogical University
A. Trifonov
Moscow State Pedagogical University
Sascha Krause
Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium
Denis Meledin
Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium
N. Kaurova
Moscow State Pedagogical University
M. Rudzinski
Lukasiewicz Research Network - Institute of Microelectronics and Photonics (LUKASIEWICZ-IMIF)
Vincent Desmaris
Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium
Victor Belitsky
Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium
G. Goltsman
Moscow State Pedagogical University
National Research University Higher School of Economics
Superconductor Science and Technology
0953-2048 (ISSN) 1361-6668 (eISSN)
Vol. 32 7 075003Ämneskategorier
Annan fysik
Signalbehandling
Den kondenserade materiens fysik
DOI
10.1088/1361-6668/ab137b