Wide Bandwidth Terahertz Mixers Based On Graphene FETs
Paper in proceeding, 2019
In this work, resistive fundamental terahertz mixers with wide RF and IF bandwidths based on graphene field-effect transistors have been demonstrated. With an RF frequency range from 220 GHz to 487 GHz, the estimated values of the 3-dB IF bandwidth are 32 GHz and 56 GHz for mixers with GFET gate lengths of 1.2 ?m and 0.6 ?m, respectively. This is competitive with the performance of mixers based on traditional semiconductor technologies.
Graphene
Graphene transistors
Mixers (machinery)
Bandwidth
Terahertz waves
Author
Xinxin Yang
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Andrei Vorobiev
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Kjell Jeppson
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Jan Stake
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Luca Banszerus
RWTH Aachen University
Christoph Stampfer
RWTH Aachen University
Martin Otto
AMO
Daniel Neumaier
AMO
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
21622027 (ISSN) 21622035 (eISSN)
Vol. 2019-September 8873869978-1-5386-8285-2 (ISBN)
44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Paris, France,
Paris, France,
Areas of Advance
Information and Communication Technology
Infrastructure
Kollberg Laboratory
Nanofabrication Laboratory
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/IRMMW-THz.2019.8873869