Reliability study of THz Schottky mixers and HBV frequency multipliers for space applications
Paper in proceeding, 2020

We report status and current results of the preliminary reliability study on 300 GHz InP heterostructure barrier varactor diode multipliers and 1200 GHz GaAs Schottky diode mixers. Both types of diodes are monolithically integrated with circuits and were processed on 3" InP and GaAs wafers respectively using established III-V processing. We will present results on thermal step-stress tests up to 300oC, indicating the operational temperature limitations of the devices. Also, the analysis of the accelerated lifetime testing (1000h) will be discussed.

Author

Vladimir Drakinskiy

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Josip Vukusic

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Daniel Heinerås

Wasa Millimeter Wave AB

Peter Sobis

Omnisys Instruments

Vaclav Valenta

European Space Agency (ESA)

Marie Genevieve Perichaud

European Space Agency (ESA)

Fernando Martinez Martin

European Space Agency (ESA)

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Proceedings of the 31st Symposium on Space Terahertz Technology, ISSTT 2020

118-

2020 31st IEEE International Symposium on Space Terahertz Technology, ISSTT 2020
Tempe, USA,

Subject Categories

Reliability and Maintenance

Other Materials Engineering

Other Electrical Engineering, Electronic Engineering, Information Engineering

More information

Latest update

11/15/2021