Reliability study of THz Schottky mixers and HBV frequency multipliers for space applications

Paper i proceeding, 2020

We report status and current results of the preliminary reliability study on 300 GHz InP heterostructure barrier varactor diode multipliers and 1200 GHz GaAs Schottky diode mixers. Both types of diodes are monolithically integrated with circuits and were processed on 3" InP and GaAs wafers respectively using established III-V processing. We will present results on thermal step-stress tests up to 300oC, indicating the operational temperature limitations of the devices. Also, the analysis of the accelerated lifetime testing (1000h) will be discussed.