On-wafer characterisation of resonant-tunnelling diodes up to 1.1 THz
Paper in proceeding, 2023
This paper presents on-wafer S-parameter characterisation of resonant-tunnelling diodes between 0.5 THz and 1.1 THz. Diodes with a peak current density of 532 kA/cm2 and a clear negative differential region have been fabricated. An on-chip Multi-Thru-Reflect-Line calibration kit was developed and utilised to achieve accurate S-parameter measurements up to 1.1 THz.
Author
Patrik Blomberg
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Josip Vukusic
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Vladimir Drakinskiy
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Jan Stake
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
21622027 (ISSN) 21622035 (eISSN)
9798350336603 (ISBN)
48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Montreal, Canada,
Montreal, Canada,
Development of the national infrastructure for microwave and terahertz characterization: expanding the use of the electromagnetic spectrum
Swedish Research Council (VR) (2020-06187), 2021-01-01 -- 2024-12-31.
THz kommunikation - NU
Swedish Foundation for Strategic Research (SSF) (CHI19-0027), 2021-01-01 -- 2025-12-31.
Areas of Advance
Information and Communication Technology
Infrastructure
Kollberg Laboratory
Myfab (incl. Nanofabrication Laboratory)
Driving Forces
Sustainable development
Subject Categories (SSIF 2011)
Control Engineering
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/IRMMW-THz57677.2023.10299370