Modeling the Electrical Degradation of Micro-Transfer Printed 845 nm VCSILs for Silicon Photonics
Journal article, 2024
This article deals for the first time with the electrical degradation of novel 845 nm vertical-cavity silicon-integrated lasers (VCSILs) for silicon photonics (SiPh). We analyzed the reliability of these devices by submitting them to high current stress. The experimental results showed that stress induced: 1) a significant increase in the series resistance, occurring in two separated time-windows and 2) a lowering of the turn-on voltage. To understand the origin of such degradation phenomena, we simulated the $\textit{I}$ - $\textit{V}$ characteristics and the band diagrams by a Poisson-drift-diffusion simulator. We demonstrated that the degradation was caused by the diffusion of mobile species capable of compensating the p-type doping. The diffusing species are expected to migrate from the p-contact region in the top distributed Bragg reflector (DBR) towards the active layers.
Substrates
Degradation
Vertical cavity surface emitting lasers
silicon photonics (SiPh)
Impurities
Degradation
Optical reflection
impurities
diffusion
vertical-cavity silicon-integrated laser (VCSIL)
Stress
Resistance
Author
M. Zenari
University of Padua
M. Buffolo
University of Padua
Carlo De Santi
University of Padua
J. Goyvaerts
LIGENTEC SA
Alexander Grabowski
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Johan Gustavsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Roel Baets
Ghent university
Anders Larsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Gunther Roelkens
Ghent university
Gaudenzio Meneghesso
University of Padua
Enrico Zanoni
University of Padua
Matteo Meneghini
University of Padua
IEEE Transactions on Electron Devices
0018-9383 (ISSN) 15579646 (eISSN)
Vol. 71 2 1131-1138Subject Categories
Telecommunications
DOI
10.1109/TED.2023.3346370