Modeling the Electrical Degradation of Micro-Transfer Printed 845 nm VCSILs for Silicon Photonics
Artikel i vetenskaplig tidskrift, 2024
This article deals for the first time with the electrical degradation of novel 845 nm vertical-cavity silicon-integrated lasers (VCSILs) for silicon photonics (SiPh). We analyzed the reliability of these devices by submitting them to high current stress. The experimental results showed that stress induced: 1) a significant increase in the series resistance, occurring in two separated time-windows and 2) a lowering of the turn-on voltage. To understand the origin of such degradation phenomena, we simulated the $\textit{I}$ - $\textit{V}$ characteristics and the band diagrams by a Poisson-drift-diffusion simulator. We demonstrated that the degradation was caused by the diffusion of mobile species capable of compensating the p-type doping. The diffusing species are expected to migrate from the p-contact region in the top distributed Bragg reflector (DBR) towards the active layers.
Substrates
Degradation
Vertical cavity surface emitting lasers
silicon photonics (SiPh)
Impurities
Degradation
Optical reflection
impurities
diffusion
vertical-cavity silicon-integrated laser (VCSIL)
Stress
Resistance
Författare
M. Zenari
Università di Padova
M. Buffolo
Università di Padova
Carlo De Santi
Università di Padova
J. Goyvaerts
LIGENTEC SA
Alexander Grabowski
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Johan Gustavsson
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Roel Baets
Universiteit Gent
Anders Larsson
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Gunther Roelkens
Universiteit Gent
Gaudenzio Meneghesso
Università di Padova
Enrico Zanoni
Università di Padova
Matteo Meneghini
Università di Padova
IEEE Transactions on Electron Devices
0018-9383 (ISSN) 15579646 (eISSN)
Vol. 71 2 1131-1138Ämneskategorier
Telekommunikation
DOI
10.1109/TED.2023.3346370