Impact of the oxide aperture width on the degradation of 845 nm VCSELs for silicon photonics
Journal article, 2024
Stress
Oxide aperture
PICs
Optical beams
Vertical cavity surface emitting lasers
Resistance
Degradation
VCSEL
Diffusion
Degradation
Apertures
Optical imaging
Author
M. Zenari
University of Padua
M. Buffolo
University of Padua
Fabiana Rampazzo
University of Padua
C. De Santi
University of Padua
Francesca Rossi
Institute of Materials for Electronics and Magnetism
Laura Lazzarini
Institute of Materials for Electronics and Magnetism
J. Goyvaerts
LIGENTEC SA
Alexander Grabowski
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Johan Gustavsson
LIGENTEC SA
Roel G. Baets
Ghent university
Anders Larsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Gunther Roelkens
Ghent university
G. Meneghesso
University of Padua
E. Zanoni
University of Padua
M. Meneghini
University of Padua
IEEE Journal of Selected Topics in Quantum Electronics
1077-260X (ISSN) 15584542 (eISSN)
Vol. In PressSubject Categories (SSIF 2011)
Telecommunications
DOI
10.1109/JSTQE.2024.3415674