Impact of the oxide aperture width on the degradation of 845 nm VCSELs for silicon photonics
Journal article, 2024
Optical imaging
Degradation
Degradation
Oxide aperture
Apertures
Stress
Optical beams
Diffusion
Vertical cavity surface emitting lasers
Resistance
PICs
VCSEL
Author
M. Zenari
University of Padua
M. Buffolo
University of Padua
Fabiana Rampazzo
University of Padua
C. De Santi
University of Padua
Francesca Rossi
Institute of Materials for Electronics and Magnetism
Laura Lazzarini
Institute of Materials for Electronics and Magnetism
J. Goyvaerts
LIGENTEC SA
Alexander Grabowski
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Johan Gustavsson
LIGENTEC SA
Roel G. Baets
Ghent university
A. Larsson
Gunther Roelkens
Ghent university
G. Meneghesso
University of Padua
E. Zanoni
University of Padua
M. Meneghini
University of Padua
IEEE Journal of Selected Topics in Quantum Electronics
1077-260X (ISSN) 15584542 (eISSN)
Vol. In PressSubject Categories
Telecommunications
DOI
10.1109/JSTQE.2024.3415674