Impact of the oxide aperture width on the degradation of 845 nm VCSELs for silicon photonics
Journal article, 2024

For the first time, we analyzed the degradation as a function of the oxide aperture in 845 nm VCSELs designed for silicon photonics (SiPh) applications. First, we evaluated the optical degradation of the devices by collecting EL images during a constant current stress. The experimental results showed an increased spreading of the optical beam of the VCSEL with increasing ageing time. Based on numerical simulations, we demonstrated that the electrical degradation (increase in series resistance) is responsible a larger current spreading which, in turn, increases the FWHM (full width half maximum) of the optical beam. We further evaluated the series resistance variation by aging four lasers with different oxide apertures. The results of this set of experiments showed that the electrical degradation is stronger as the oxide aperture is smaller, and mostly depends on the contribution of the top DBR resistance. Thanks to our analysis we proved that the use of a larger aperture can result in a better device reliability.

Optical imaging

Degradation

Degradation

Oxide aperture

Apertures

Stress

Optical beams

Diffusion

Vertical cavity surface emitting lasers

Resistance

PICs

VCSEL

Author

M. Zenari

University of Padua

M. Buffolo

University of Padua

Fabiana Rampazzo

University of Padua

C. De Santi

University of Padua

Francesca Rossi

Institute of Materials for Electronics and Magnetism

Laura Lazzarini

Institute of Materials for Electronics and Magnetism

J. Goyvaerts

LIGENTEC SA

Alexander Grabowski

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Johan Gustavsson

LIGENTEC SA

Roel G. Baets

Ghent university

A. Larsson

Gunther Roelkens

Ghent university

G. Meneghesso

University of Padua

E. Zanoni

University of Padua

M. Meneghini

University of Padua

IEEE Journal of Selected Topics in Quantum Electronics

1077-260X (ISSN) 15584542 (eISSN)

Vol. In Press

Subject Categories

Telecommunications

DOI

10.1109/JSTQE.2024.3415674

More information

Latest update

7/1/2024 1